Opening: 00AM - 24PM
DOE Patents Patent: Growth of large aluminum .Diese Seite übersetzen

DOE Patents Patent: Growth of large aluminum nitride single crystals with thermal-gradient control. Growth of large aluminum nitride single crystals with thermal-gradient control. Full Record; References (361) Other Related Research; Abstract. In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the ...

Get Price
US Patent # 6,383,962. Aluminum nitride .Diese Seite übersetzen

Aluminum nitride sintered product Abstract. An aluminum nitride sintered product which is made mainly of aluminum nitride and contains an yttrium compound in an amount of from 0.6 to 5 wt % as calculated as yttrium oxide, a vanadium compound in an amount of from 0.02 to 0.4 wt % as calculated as vanadium and carbon in an amount of from 0.03 to 0.10 wt % and which has a three-point bending ...

Get Price
Aluminum nitride | AlN - PubChemDiese Seite übersetzen

Aluminum nitride | AlN | CID 90455 - structure, chemical names, physical and chemical properties, classification, patents, literature, biological activities, safety/hazards/toxicity information, .

Get Price
US Patent for Synthesis of aluminum nitride .Diese Seite übersetzen

Solid aluminum nitride, deposited for example, in epitaxial layers, is prepared by reacting aluminum and selenium to form aluminum monoselenide, and transporting the aluminum monoselenide in an inert carrier gas to a heated deposition zone where it is contacted with and reacts with nitrogen to give the aluminum nitride, the carrier gas flushing away elemental selenium also produced in the ...

Get Price
Spherical aluminum nitride powder - Google .Diese Seite übersetzen

[Problem] To provide a spherical aluminum nitride powder, and production method therefor, with excellent high thermal conductivity and filling property for use as a filler in a heat-releasing material. [Solution] A spherical aluminum nitride powder characterized in that the average particle size is 3~30 [mu]m, sphericity is 0.75 or higher, and oxygen content is 1 % by weight or less, and ...

Get Price
US Patent Application for ALUMINUM NITRIDE .Diese Seite übersetzen

A vertically structured, aluminum nitride-based semiconductor deep ultraviolet light-emitting device is provided that exhibits a high light emission efficiency and an improved yield. The aluminum nitride-based semiconductor deep ultraviolet light-emitting device includes: a conductive support substrate; a porous metal film having a conductive macroporous structure with a pore rate of from 10% ...

Get Price
US6084221A - Aluminum nitride heater - Google .Diese Seite übersetzen

The aluminum nitride sintered body contains a group IIa or IIIa element in the periodic table or a compound thereof and silicon or a silicon compound of 0.01 to 0.5 percent by weight in terms of the silicon element, and preferably further contains a group VIII transition element or a compound thereof by 0.01 to 1 percent by weight in terms of the element.

Cited by: 10Get Price
Method for preparing aluminum nitride and its .Diese Seite übersetzen

Method for preparing aluminum nitride and its sinter Abstract. A method for preparing high-purity aluminum nitride having high thermal conductivity and heat resistance for aluminum nitride substrates, which comprises the steps of reacting an organic aluminum compound with an aminotriazine in a solvent to obtain an aluminum nitride precursor, separating the precursor form the solvent, and ...

Get Price
US5646078A - Aluminum nitride powder - .Diese Seite übersetzen

An aluminum nitride powder comprising polycrystalline particles which have clearly observed grain boundaries, an agglomerated particle size of 0.1 to 100 μm when measured by a particle size distribution analyzer, a tapped bulk density of 0.55 to 2.0 g/cm 3, and a ratio of a number average particle size calculated from a SEM photograph image to a particle size calculated from a BET specific ...

Get Price
(PDF) The Advanced Aluminum Nitride .Diese Seite übersetzen

Background: High purity nanosized aluminum nitride synthesis is a current issue for both industry and science. However, there is no up-to-date review considering the major issues and the technical ...

Get Price
US Patent for Method for depositing an .Diese Seite übersetzen

A method for depositing an aluminium nitride layer is described herein. AlGaN/GaN based semiconductors are used in various devices such as light emitting diodes, laser diodes, photovoltaic solar cells and power devices such as high electron mobility transistors.

Get Price
US Patent # 4,906,511. Aluminum nitride circuit .Diese Seite übersetzen

Aluminum nitride circuit board Abstract. Disclosed is an aluminum nitride circuit board which is advantageously used as a carrier for a part emitting a large volume of heat, the substrate of the circuit board is a sintered aluminum nitride substrate which comprises a basal part and projection rising from the basal part and offering a surface for application of a metallizing composition, a ...

Get Price
DOE Patents Patent: Growth of large aluminum .Diese Seite übersetzen

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth.

Get Price
Aluminum Nitride Containing (ain) Patents .Diese Seite übersetzen

The aluminum nitride sintered body is a sintered body of a powder mixture containing an aluminum nitride powder and a sintering aid, characterized by having a thermal conductivity of at least 190 W/m·K and a shrinkage factor represented by the percentage of {(dimensions of the molded body before sintering)-(dimensions of the sintered body after sintering)}/(dimensions of the molded body before sintering) of .

Get Price
Preparation of a high purity aluminum nitride ... .Diese Seite übersetzen

Preparation of a high purity aluminum nitride antenna window by organometallic pyrolysis Abstract. A process and apparatus for making high purity aluminum nitride from organometallic aluminum, such as an alkylaluminum compound. A gaseous alkylaluminum compound and gaseous ammonia are introduced into a heated reaction zone where the gases are ...

Get Price
Aluminum nitride body having graded .Diese Seite übersetzen

Aluminum nitride body having graded metallurgy Abstract. Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely ...

Get Price
Aluminium nitride obtaining methodDiese Seite übersetzen

The closest in technical essence to the claimed invention is a method of producing aluminum nitride (Method of producing aluminum nitride, Patent RF №2421395, SW 21/072, publ. 20.06.2011), including the production of aluminum nitride by the action of a constant magnetic field with induction of 0.30 to 0.40 T at the burning aluminum nanopowder ...

Get Price
US Patent # 5,229,213. Aluminum nitride circuit .Diese Seite übersetzen

Aluminum nitride circuit board Abstract. An aluminum nitride circuit board included an aluminum nitride ceramic as an insulating material and a conductor circuit which is formed at least as an inner conductor and is made of at least one of gold, copper or silver.

Get Price
GB2127709A - Manufacture of aluminium nitride .Diese Seite übersetzen

High purity aluminium nitride is manufactured by levitating a charge of molten aluminium (112) in a reaction zone (100) by means of electromagnetic induction in a levitation coil (111) in an oxygen-free atmosphere, reacting the levitated molten aluminium with nitrogen gas at a temperature effective to form aluminium nitride, e.g. 1800 to 2300 DEG C, and recovering the resulting aluminium ...

Cited by: 16Get Price
METHOD OF MANUFACTURING ALUMINIUM .Diese Seite übersetzen

The invention relates to a method of manufacturing aluminium nitride, in which a layer structure including rolled aluminium-based products is prepared by stacking or winding, and it is heated under a nitrogenous atmosphere, the majority of the nitriding occurring during a phase in which the temperature of the nitrogenous atmosphere is maintained between 400° C. and 660° C.

Get Price
US3607046A - Preparation of aluminum nitride - .Diese Seite übersetzen

Aluminum nitride is formed in a reaction conducted at about normal atmospheric pressure by bringing together pure aluminum and a small amount of lithium under dry conditions and heating these two metals in the presence of nitrogen. In a preferred embodiment the reaction system is heated to a temperature of about 400* C. to 1,100* C. whereby nitrogen reacts with lithium to form lithium nitride ...

Cited by: 12Get Price
US Patent for Aluminum nitride sintered body .Diese Seite übersetzen

A high-purity aluminum nitride sintered body is provided by efficiently removing oxides contained in a raw material powder in producing an aluminum nitride sintered body and preventing composite oxide produced by reaction of oxides contained in the raw material powder with a sintering aid from remaining in the aluminum nitride sintered body.

Get Price